Vertical Bridgman growth of Cd1-yZnyTe and characterization of substrates for use in Hg1-xCdxTe liquids phase epitaxy

Journal of Crystal Growth

Volumn 101, Issue 1-4, 1990, Pages 266-269

  Bruder, M ^a   Schwarz, H J ^a   Schmitt, R ^a   Maier, H ^a   Moller M O ^b  

^a Fachbereich Infrarot und Nachtsichtkomponenten AEG Aktiengesellschaft D Heilbronn Fed Rep of Germany ^*

^b UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; MERCURY COMPOUNDS; X-RAY ANALYSIS; CRYSTALS--EPITAXIAL GROWTH; ETCHING; SEMICONDUCTING FILMS;

CADMIUM ZINC TELLURIDE; LIQUID PHASE EPITAXY; MERCURY CADMIUM TELLURIDE; VERTICAL BRIDGMAN GROWTH; SINGLE CRYSTALS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0025412824     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(90)90979-U     Document Type: Article

References (12)

1. Vapor growth of CdTe as substrate material for Hg1-xCdxTeepitaxy
2. High quality, single crystal CdTe grown by a modified horizontal Bridgman technique
3. Materials Technologies for IR Detectors
4. The melt-growth and characterization of cadmium telluride
5. X-ray determination of dislocation density in epitaxial ZnCdTe