The influence of inhomogeneities in materials properties in silicon radiation detectors

Nuclear Inst. and Methods in Physics Research, A

Volumn 288, Issue 2-3, 1990, Pages 439-450

  Henari, F Z ^a   Finch, E C ^a   Delaney, C F G ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SPECTROSCOPY, NUCLEAR RADIATION;

ALPHA PARTICLES; SILICON SURFACE BARRIER DETECTORS;

RADIATION DETECTORS;

EID: 0025402123     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(90)90135-S     Document Type: Article

References (16)

1. Laser Scanning Technique for the Detection of Resistivity and Lifetime Inhomogeneities in Semiconductor Devices
2. An analysis of the causes of the pulse height defect and its mass dependence for heavy-ion silicon detectors