Spatial distribution of SiH3 radicals in RF silane plasma

Japanese Journal of Applied Physics

Volumn 29, Issue 3, 1990, Pages L505-L507

  Itabashi, Naoshi ^a   Nishiwaki, Nobuki ^a   Magane, Mitsuo ^a   Naito, Susumu ^a   Goto, Toshio ^a   Matsuda, Akihisa ^b   Yamada, Chikashi ^c   Hirota, Eizi ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

Author keywords

Amorphous silicon thin film; Infrared diode laser absorption spectroscopy (IRLAS); Plasma CVD; RF silane plasma; SiH3 radical density; Spatial distribution of SiH3

Indexed keywords

PLASMA DEVICES; SILANES--CHEMICAL VAPOR DEPOSITION; SPECTROSCOPY, ABSORPTION--LASER APPLICATIONS;

INFRARED DIODE LASER ABSORPTION SPECTROSCOPY; SPATIAL DISTRIBUTION;

SEMICONDUCTING SILICON;

EID: 0025402112     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.29.L505     Document Type: Article

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