Generalized Excess Noise Factor For Avalanche Photodiodes Of Arbitrary Structure

IEEE Transactions on Electron Devices

Volumn 37, Issue 3, 1990, Pages 599-610

  Hakim, Nagib Z ^a   Saleh, Bahaa E A ^b   Teich, Malvin C ^a  

^a Och Spine at New York Presbyterian Hospitals   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES, AVALANCHE--NOISE, SPURIOUS SIGNAL; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

AVALANCHE PHOTODIODES (APD); DARK CARRIERS; DARK GENERATION RATE; EXCESS NOISE FACTOR; INJECTION CARRIERS; IONIZATION COEFFICIENTS;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0025399338     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.47763     Document Type: Article

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