Hot-Carrier-Induced Deep-Level Defects from Gated-Diode Measurements on MOSFET's

IEEE Electron Device Letters

Volumn 11, Issue 2, 1990, Pages 95-97

  Weber, W ^b   Asenov, A ^a   Bollu, M ^a   Koch, F ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION DAMAGE; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

INTERFACE DEFECTS; LEVEL DEFECTS; REVERSE BIAS CURRENTS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0025388736     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.46940     Document Type: Article

References (0)