Narrow-Band Modulation of Semiconductor Lasers at Millimeter Wave Frequencies (> 100 GHz) by Mode Locking

IEEE Journal of Quantum Electronics

Volumn 26, Issue 2, 1990, Pages 250-261

  Lau, Kam Y ^a,b  

^a NOKIA RESEARCH CENTER   (United States)

^b Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MILLIMETER WAVES; MODULATION; SEMICONDUCTING GALLIUM COMPOUNDS;

NARROW BAND MODULATION; SINUSOIDAL MODULATION;

LASERS, SEMICONDUCTOR;

EID: 0025384504     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.44956     Document Type: Article

References (17)

1. Basic materials on high-speed modulation can be found in K. Y. Lau and A. Yariv, “Ultra-high speed semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-21, pp. 121–138, 1985; more recent advances can be found in J. E. Bowers, B. R. Hemmenway, A. H. Gnauck, and D. P. Wilt, “High speed InGaAsP constricted mesa lasers,” IEEE J. Quantum Electron., vol. QE-22, pp. 833–844, 1986; R. Olshansky, W. Powazinik, P. Hill, V. Lanzisera, and R. N. Lauer, “InGaAsP buried heterostructure laser with 22 GHz bandwidth modulation efficiency,” Electron. Lett., vol. 23, p. 839, 1987; R. S. Tucker, “High speed modulation of semiconductor lasers,” J. Lightwave Technol., vol. LT-3, pp. 1180–1192, 1985, and references therein.
2. K. Uomi, T. Mishima, and N. Chinone, “Ultra-high relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAlAs multiquantum well lasers,” Appl. Phys. Lett., vol. 51, pp. 78–80, 1985.
3. K.Y. Lau, “Efficient narrow-band direct modulation of semiconductor injection lasers at millimeter wave frequencies of 100 GHz and beyond,” Appl. Phys. Lett., vol. 52, pp. 2214–2216, 1988.
4. J. P. van der Ziel, “Mode-locking of semiconductor lasers,” Semiconductor and Semimetals, vol. 22. New York: Academic, 1985, part B, ch. 1.
5. S. Akiba, G. E. Williams, and H. A. Haus, “High rate pulse generation from InGaAsP laser in selfoc lens external resonator,” Electron. Lett., vol. 17, pp. 527–528, 1981.
6. K. Y. Lau and A. Yariv, “Direct modulation and active mode-locking of an ultrahigh speed GaAlAs laser at frequencies up to 18 GHz,” Appl. Phys. Lett., vol. 46, pp. 326–328, 1985.
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9. K. Y. Lau, I. Ury, and A. Yariv, “Passive and active mode-locking of a semiconductor laser without an external cavity,” Appl. Phys. Lett., vol. 46, pp. 1117–1119, 1985.
10. A. E. Siegman, Lasers. Mill Valley, CA: University Science, 1986; see also H. A. Haus, “A theory of forced mode-locking,” IEEE J. Quantum Electron., vol. QE-11, pp. 323–330, 1975.
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13. Ch. Harder, K. Y. Lau, and A. Yariv, “Bistability and pulsations in semiconductor lasers with inhomogeneous current injection,” IEEE J. Quantum Electron., vol. QE-18, pp. 1351–1361, 1982.
14. K. Y. Lau, P. L. Derry, and A. Yariv, “Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers,” Appl. Phys. Lett., vol. 52, pp. 88–90, 1988.
15. A. Yariv, Quantum Electronics, 2nd ed. New York: Wiley, 1975, p. 271.
16. R. S. Tucker and G. Eisenstein, presented at the IEEE Int. Semiconductor Laser Conf., Boston, MA, 1988.
17. N. S. K. Kwong, K. Y. Lau, N. Bar-Chaim, I. Ury, and K. J. Lee, “High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorber,” Appl. Phys. Lett., vol. 51, pp. 1879–1881, 1987.