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Semiconductor Science and Technology

Volumn 5, Issue 2, 1990, Pages 183-190

Theory of n-inversion layers in narrow gap semiconductors: The role of the boundary conditions

(1) Sobkowicz, P a

a INSTITUTE OF PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON WAVEFUNCTIONS; INSULATOR-SEMICONDUCTOR INTERFACE; N-INVERSION LAYERS; NARROW GAP SEMICONDUCTORS; SPIN SPLITTINGS; SUBBAND ENERGIES;

MERCURY AND AMALGAMS; SEMICONDUCTOR DEVICES;

SEMICONDUCTOR MATERIALS;

EID: 0025384069 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/5/2/008 Document Type: Article

Times cited : (32)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.