메뉴 건너뛰기




Volumn 11, Issue 1, 1990, Pages 39-41

Relating CMOS Inverter Lifetime to DC Hot-Carrier Lifetime of NMOSFET’s

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET--APPLICATIONS; SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

EID: 0025254790     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.46924     Document Type: Article
Times cited : (16)

References (9)
  • 1
    • 84945713471 scopus 로고
    • Hot-electron-induced MOSFET degradation-Model, monitor, and improvement
    • Feb.
    • C. Hu, S. C. Tam, F.-C. Hsu, P. K. Ko, T. Y. Chan, and K. W, Terrill, “Hot-electron-induced MOSFET degradation-Model, monitor, and improvement,” IEEE Trans. Electron Devices, vol. ED-32, no. 2, pp. 375-385, Feb. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , Issue.2 , pp. 375-385
    • Hu, C.1    Tam, S.C.2    Hsu, F.-C.3    Ko, P.K.4    Chan, T.Y.5    Terrill, K.W.6
  • 2
    • 0024053311 scopus 로고
    • Simulation of MOSFET lifetime under ac hot-electron stress
    • July
    • M. M. Kuo et al., “Simulation of MOSFET lifetime under ac hot-electron stress,” IEEE Trans. Electron Devices, vol. 35, no. 7, pp. 1004-1011, July 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , Issue.7 , pp. 1004-1011
    • Kuo, M.M.1
  • 3
    • 0005364442 scopus 로고
    • Effects of oxide field on hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors
    • J. Y. Choi, P. K. Ko, and C. Hu, “Effects of oxide field on hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors,” Appl. Phys. Lett., vol. 50, pp. 1188-1190, 1987.
    • (1987) Appl. Phys. Lett. , vol.50 , pp. 1188-1190
    • Choi, J.Y.1    Ko, P.K.2    Hu, C.3
  • 4
    • 0024170167 scopus 로고
    • New insight into hot-electron-induced degradation of n-MOSFET’s
    • Dec.
    • T. Y. Chan, C. L. Chiang, and H. Gaw, “New insight into hot-electron-induced degradation of n-MOSFET’s,” in IEDM Tech. Dig., Dec. 1988, pp. 196-199.
    • (1988) IEDM Tech. Dig. , pp. 196-199
    • Chan, T.Y.1    Chiang, C.L.2    Gaw, H.3
  • 5
    • 0022958457 scopus 로고
    • Lifetimes and substrate currents in static and dynamic hot-carrier degradation
    • Dec.
    • W. Weber, C. Werner, and A. V. Schwerin, “Lifetimes and substrate currents in static and dynamic hot-carrier degradation,” in IEDM Tech. Dig., Dec. 1986, pp. 390-393.
    • (1986) IEDM Tech. Dig. , pp. 390-393
    • Weber, W.1    Werner, C.2    Schwerin, A.V.3
  • 7
    • 0023399625 scopus 로고
    • Hot-carrier-induced MOSFET degradation under ac stress
    • Aug.
    • J. Y. Choi, P. K. Ko, and C. Hu, “Hot-carrier-induced MOSFET degradation under ac stress,” IEEE Electron Device Lett., vol. EDL-8, pp. 333-335, Aug. 1987.
    • (1987) IEEE Electron Device Lett. , vol.EDL-8 , pp. 333-335
    • Choi, J.Y.1    Ko, P.K.2    Hu, C.3
  • 8
    • 0024860578 scopus 로고
    • Kinetics of hot carrier effects for circuit simulation
    • Apr.
    • S. Aur, “Kinetics of hot carrier effects for circuit simulation,” in Proc. IEEE Rel. Phys, Symp., Apr. 1989, pp. 88-91.
    • (1989) Proc. IEEE Rel. Phys, Symp. , pp. 88-91
    • Aur, S.1
  • 9
    • 0022957160 scopus 로고
    • Impact of hot electron trapping on half micron PMOSFETs with p+ poly si gate
    • Dec.
    • Y. Huruta, K. Maeguchi, and K. Kanzaki, “Impact of hot electron trapping on half micron PMOSFETs with p+ poly si gate,” in IEDM Tech. Dig., Dec. 1986, pp. 718-721.
    • (1986) IEDM Tech. Dig. , pp. 718-721
    • Huruta, Y.1    Maeguchi, K.2    Kanzaki, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.