Novel Linearisation Technique for Implementing Large-Signal MOS Tunable Transconductor

Electronics Letters

Volumn 26, Issue 2, 1990, Pages 138-139

  Wang, Z ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Circuit theory and design; MOS structures and devices; Transisto

Indexed keywords

SEMICONDUCTOR DEVICES, MOS;

LINEARISATION TECHNIQUE; MOS TRANSISTORS; TUNABLE TRANSCONDUCTOR;

TRANSISTORS, FIELD EFFECT;

EID: 0025249573     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19900094     Document Type: Article

References (6)

1. Tsividis, Y., Czarnul, Z., and Fang, S. A. : ‘MOS transconductors and integrators with high linearity’, Electron. Lett., 1986, 22, pp. 245-246
2. Czarnul, Z., and Tsividis, Y.: ‘MOS tunable transconductor’, Electron. Lett., 1986, 22, pp. 721-722
3. Banu, M., and Tsividis, Y.: ‘Fully integrated active RC filters in MOS technology’, IEEE J. Solid-State Circ, 1983, SC-18, pp. 644-651
4. Gray, P. R., and Meyer, R. G. : ‘Analysis and design of analoginte grated circuits’ (J. Wiley & Sons, NY, 1984)
5. Wang, Z., and Guggenbuhl, W.: ‘A voltage-controllable MOS transconductor using bias offset technique’, IEEE J. Solid-State Circ, 1990, SC-25, to be published
6. Viswanathan, T. L.: ‘CMOS transconductance element’, Proc. IEEE, 1986, 74, pp. 222-224