Comparison between oxygen depth profiles in oxygen-implanted titanium measured by RBS and XPS combined with argon sputtering

Nuclear Inst. and Methods in Physics Research, B

Volumn 45, Issue 1-4, 1990, Pages 212-215

  Iwaki, Masaya ^a   Okabe, Yoshio ^b   Yabe, Katsumasa ^c  

^a RIKEN   (Japan)

^b SAITAMA INSTITUTE OF TECHNOLOGY   (Japan)

^c Government Industrial Development Lab ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; OXYGEN - SPECTROSCOPIC ANALYSIS; SPUTTERING; TITANIUM AND ALLOYS - ION IMPLANTATION;

DEPTH PROFILES; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

SPECTROSCOPY;

EID: 0025229135     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(90)90819-G     Document Type: Article

References (4)

1. Formation of ain by nitrogen molecule ion implantation
2. Formation of rutile TiO2 induced by high-dose O+ -implantation and its characteristics
3. Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO2and Si3N4Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon