RHEED oscillation and surface diffusion length on GaAs(111)B surface

Journal of Crystal Growth

Volumn 99, Issue 1-4, 1990, Pages 530-534

  Shitara, T ^a   Kondo, E ^a   Nishinaga, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--ORIENTATION; DIFFUSION; ELECTRONS--DIFFRACTION; MICROSCOPIC EXAMINATION; SURFACES;

QUANTUM WELLS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION (RHEED);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0025211508     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(90)90577-8     Document Type: Article

References (8)

1. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
2. Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs
3. Thermodynamic aspects of molecular beam epitaxy: High temperature growth in the GaAs/Ga1−xAlxAs system
4. Condensation and Evaporation