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Volumn 37, Issue 1, 1990, Pages 191-201

An Analytical Model for the Determination of the Transient Response of CML and ECL Gates

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION--APPLICATIONS; LOGIC CIRCUITS, EMITTER COUPLED--ANALYSIS; SEMICONDUCTOR DEVICES--MODELING;

EID: 0025208814     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43816     Document Type: Article
Times cited : (36)

References (17)
  • 1
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    • J. M. C. Stork, “Bipolar transistor scaling for minimum switching delay and energy dissipation,” in IEDM Tech. Dig., 1988, p. 550.
    • (1988) IEDM Tech. Dig. , pp. 550
    • Stork, J.M.C.1
  • 2
    • 0019623356 scopus 로고
    • Analytic approximations for propagation delays in current mode switching circuits including collector-base capacitances
    • A. Barna “Analytic approximations for propagation delays in current mode switching circuits including collector-base capacitances,” IEEE J. Solid-State Circuits, vol. SC-16, p. 597, 1981.
    • (1981) IEEE J. Solid-State Circuits , vol.SC-16 , pp. 597
    • Barna, A.1
  • 3
    • 0001451810 scopus 로고
    • A propagation delay expression and its application to the optimization of poly silicon emitter ECL processes
    • E. F. Chor, A. Brunnschweiler, and P. Ashburn “A propagation delay expression and its application to the optimization of poly silicon emitter ECL processes,” IEEE J. Solid-State Circuits, vol. 23, p. 251, 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 251
    • Chor, E.F.1    Brunnschweiler, A.2    Ashburn, P.3
  • 6
    • 0021640315 scopus 로고
    • An 80 ps ECL circuit with high current density transistor
    • T. Tashiro et al., “An 80 ps ECL circuit with high current density transistor,” in IEDM Tech. Dig., 1984, p. 686.
    • (1984) IEDM Tech. Dig. , pp. 686
    • Tashiro, T.1
  • 7
    • 0022986260 scopus 로고
    • Submicron epitaxial layer and RTA technology for extremely high speed bipolar transistors
    • H. Takemura et. al., “Submicron epitaxial layer and RTA technology for extremely high speed bipolar transistors,” in IEDM Tech. Dig., 1986, p. 424.
    • (1986) IEDM Tech. Dig. , pp. 424
    • Takemura, H.1
  • 8
    • 0022983339 scopus 로고
    • A high speed bipolar LSI process using self-aligned double diffusion polysilicon technology
    • K. Kikuchi, S. Kameyama, M. Kajiyama, M. Nishio, and T. Komeda, “A high speed bipolar LSI process using self-aligned double diffusion polysilicon technology,” in IEDM Tech. Dig., 1986, p. 420.
    • (1986) IEDM Tech. Dig. , pp. 420
    • Kikuchi, K.1    Kameyama, S.2    Kajiyama, M.3    Nishio, M.4    Komeda, T.5
  • 10
    • 0023542542 scopus 로고
    • A sub-40 ps ECL circuit at a switching current of 1.28 mA
    • K. Ueno, H. Goto, E. Sugiyama, and H. Tsunoi, “A sub-40 ps ECL circuit at a switching current of 1.28 mA,” in IEDM Tech. Dig., 1987, p. 371.
    • (1987) IEDM Tech. Dig. , pp. 371
    • Ueno, K.1    Goto, H.2    Sugiyama, E.3    Tsunoi, H.4
  • 11
    • 17144436000 scopus 로고
    • A sub-50 ps single poly planar bipolar technology
    • T. C. Chen et. al., “A sub-50 ps single poly planar bipolar technology,” in IEDM Tech. Dig., 1988, p. 740.
    • (1988) IEDM Tech. Dig. , pp. 740
    • Chen, T.C.1
  • 12
    • 0024167186 scopus 로고
    • A sub-30ps Si bipolar LSI technology
    • T. Gomi et. al., “A sub-30ps Si bipolar LSI technology,” in IEDM Tech. Dig., 1988, p. 744.
    • (1988) IEDM Tech. Dig. , pp. 744
    • Gomi, T.1
  • 13
    • 84918653970 scopus 로고
    • An ultra high speed trench isolated double polysilicon bipolar process
    • M. C. Wilson, S. Duncan, and P. C. Hunt, “An ultra high speed trench isolated double polysilicon bipolar process,” in Proc. ESSDERC Conf., 1988, p. C4-101.
    • (1988) Proc. ESSDERC Conf. , pp. C4-101
    • Wilson, M.C.1    Duncan, S.2    Hunt, P.C.3
  • 14
    • 0024930514 scopus 로고
    • A submicron high performance bipolar technology
    • T. C. Chen et al., “A submicron high performance bipolar technology,” in Symp. VLSI Technol. Dig. Tech. Papers, 1989, p. 87.
    • (1989) Symp. VLSI Technol. Dig. Tech. Papers , pp. 87
    • Chen, T.C.1
  • 16
    • 0019699524 scopus 로고
    • Perspective of scaled bipolar devices
    • N. Hanaoka and A. Anzai, “Perspective of scaled bipolar devices,” in IEDM Tech. Dig., 1981, p. 512.
    • (1981) IEDM Tech. Dig. , pp. 512
    • Hanaoka, N.1    Anzai, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.