MOSFET Degradation Due to Hot-Carrier Effect at High Frequencies

IEEE Electron Device Letters

Volumn 11, Issue 1, 1990, Pages 21-23

  Subrahmaniam, Rathnam ^a   Chen, John Y ^a   Johnston, Allan H ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

AC STRESS; DRAIN CURRENT REDUCTION; HOT-CARRIER EFFECT; MOSFET DEGRADATION; PULSED GATE VOLTAGE STRESSING; SHORT CHANNEL MOSFETS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0025207695     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.46918     Document Type: Article

References (7)

1. T. Horiuchi, H. Mikoshiba, K. Nakamura, and K. Hamano, “A simple method to evaluate device lifetime due to hot-carrier effect under dynamic stress,” IEEE Electron Device Lett., vol. EDL-7, p. 337, 1986.
2. W. Weber, C. Werner, and G. Dorda, “Degradation of n-MOS transistors after pulsed stress,” IEEE Electron Device Lett., vol. EDL-5, p. 518, 1984.
3. W. Weber, C. Werner, and A. V. Schwerin, “Lifetimes and substrate currents in static and dynamic hot-carrier degradation,” in IEDM Tech. Dig., 1986, p. 390.
4. W. Weber, “Dynamic stress experiments for understanding hot-carrier degradation phenomena,” IEEE Trans. Electron Devices, vol. 35, p. 1476, 1988.
5. J. Y. Choi, P. K. Ko, and C. Hu, “Hot-carrier-induced MOSFET degradation under ac stress,” IEEE Electron Device Lett., vol. EDL-8, p. 333, 1987.
6. R. Bellens, P. Heremans, G. Groeseneken, and H. E. Maes, “Analysis of mechanisms for the enhanced degradation during A.C. hot carrier stress of MOSFET’s,” in IEDM Tech. Dig., 1988, p. 212.
7. W. Hansch and W. Weber, “The effect of transients on hot carriers,” IEEE Electron Device Lett., vol. 10, p. 252, 1989.