Features of the triggering mechanism for single event burnout of power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2260-2266

  Hohl, Jakob H ^a   Johnson, Gregory H ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRONIC CIRCUITS, TRIGGER;

COLLECTOR CURRENT DENSITIES; SINGLE EVENT BURNOUT; THRESHOLD CURRENTS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024946276     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45433     Document Type: Article

References (6)

1. J. H. Hohl and K. F. Galloway, “Analytical Model for Single Event Burnout of Power MOSFETs, IEEE Trans. Nuc. Sci. NS-34, pp. 1275–1280, Dec. 1987.
2. H. A. Shaft, “Second Breakdown - A Comprehensive Review,” Proc. IEEE, Vol. 55, p. 1272–1288, Aug. 1967.
3. A. E. Waskiewicz, J. W. Groninger and V. H. Strahan, “Burnout of Power MOS Transistors with Heavy Ions of Californium-252,”252,” IEEE Trans Nuc. Sci. NS-33, pp. 1710–1713, Dec. 1987.
4. R. M. Warner and B. L. Grung, Transistors - Fundamentals for the Integrated Circuit Engineer, New York: John Wiley & Sons, 1983, p. 478–486.
5. R. A. Colclaser, Microelectronics Processing and Device Design, New York: John Wiley and Sons, 1980, p. 256.
6. S. M. Sze, Physics of Semiconductor Devices, 2nd. ed., New York: John Wiley & Sons, 1981, pp. 45–47.