Characterization of negative resistance and bipolar latchup in thin film SOI transistors by two-dimensional numerical simulation

Volumn , Issue , 1989, Pages 44-45

  Armstrong, G A ^a   Thomas, N J ^a   Davis, J R ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--CHARGE CARRIERS;

CARRIER MOBILITY; LATCHUP EFFECT; NEGATIVE RESISTANCE; SIMOX DEVICES; SOI TRANSISTORS; SUMMARY FORM ONLY;

TRANSISTORS, FIELD EFFECT;

EID: 0024945944     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)