Radiation response of optically-triggered GaAs thyristors

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2147-2154

  Carson, R F ^a   Hughes, R C ^a   Zipperian, T E ^a   Weaver, H T ^a   Brennan, T M ^a   Hammons, B E ^a   Klem, J F ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEUTRONS; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; X-RAYS;

IONIZING RADIATION; OPTICALLY TRIGGERED THYRISTORS;

THYRISTORS;

EID: 0024942837     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45417     Document Type: Article

References (7)

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2. J. J. Wiczer, “Radiation-Hardened Optoelectronic Components: Detectors,” Proceedings of the SPIE, vol 616 pp. 254–262, 1986.
3. A. G. Kechek and V. V. Rossin, “Photon Mechanism of Propagation of a Turned-On State of a Gallium Arsenide Thyristor,” Soy. Phys. Semicond., vol. 18, pp. 640–643, June 1984.
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., New York: John Wiley and Sons, 1981, p. 76.
5. S. M. Sze and G. Gibbons, “Avalanche Breakdown of Abrupt and Linearly Graded P-N Junctions in Ge, Si, GaAs, and GaP,” Appl. Phy. Lett., vol 8, p. 641 1967.
6. W. W. Chow, “GaAs pnpn Thyristor Modelling,” SAND89-1044, 1044, Albuquerque, NM: Sandia National Laboratories, (Publication pending as of August, 1989).
7. A. Blicher, Thyristor Physics, New York: Springer-Verlag, 1976, pp. 26–27.