Displacement damage extremes in silicon depletion regions

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 1831-1839

  Marshall, P W ^a,e   Dale, C J ^e   Burke, E A ^b   Summers, G P ^c,e   Bender, G E ^d  

^a SFA INC   (United States)

^b MISSION RESEARCH CORPORATION   (United States)

^c UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^d GENERAL ELECTRIC COMPANY   (United States)

^e NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL STATISTICS; PROTONS; SEMICONDUCTING SILICON;

CHARGE INDUCED DEVICES; DARK CURRENTS;

SEMICONDUCTOR DEVICES;

EID: 0024936480     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45376     Document Type: Article

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