Interface trap formation via the two-stage H+ process

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 1848-1857

  Saks, N S ^a   Brown, D B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ION BEAMS; PROTONS;

INTERFACE TRAPS; OXIDE FIELD DEPENDENCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024934649     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45378     Document Type: Article

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