Comparison of electrical properties of SOS and ISE SOI transistors

Volumn , Issue , 1989, Pages 39-40

  Worley, E ^a   Brandewie, J ^a   Elkins, P ^a  

^a Rockwell International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTOR MATERIALS;

BACK-CHANNEL LEAKAGE; ISE (ISOLATED SILICON EPITAXY); SOI TRANSISTORS; SOI WAFERS; SOS TRANSISTORS; SUMMARY FORM ONLY;

TRANSISTORS, FIELD EFFECT;

EID: 0024930583     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)