Enhanced displacement damage effectiveness in irradiated silicon devices

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 1825-1830

  Srour, J R ^a   Hartmann, R A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; NEUTRONS; PROTONS; SEMICONDUCTING SILICON;

DARK CURRENTS; THERMAL FACTORS;

SEMICONDUCTOR DEVICES, CHARGE COUPLED;

EID: 0024915865     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45375     Document Type: Article

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