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Volumn 36, Issue 6, 1989, Pages 1954-1962

Application of a Model for Treatment of Time Dependent Effects on Irradiation of Microelectronic Devices

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICES;

EID: 0024908415     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45392     Document Type: Article
Times cited : (29)

References (18)
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  • 2
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  • 3
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  • 6
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    • Total-Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments
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  • 7
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    • Using Laboratory X-Ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments
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  • 9
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    • Total-Dose Hardness Assurance for Microcircuits for Space Environment
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  • 10
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  • 11
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    • Interface-State Generation in Radiation-Hard Oxides
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  • 12
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  • 13
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    • Dose and Energy Dependence of Interface Trap Formation in Cobalt-60 and X-Ray Environments
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    • this issue.
    • M. P. Baze, R. E. Plaag, and A. H. Johnston, “Dose Dependence of Interface Traps in Gate Oxides at High Levels of Total Dose”, IEEE Trans. Nucl. Sci., this issue.
    • IEEE Trans. Nucl. Sci
    • Baze, M.P.1    Plaag, R.E.2    Johnston, A.H.3
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  • 17
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.