a-Si1-xCx: H-Based Transistor Performance and the Relationship to Electrical and Optical Properties

IEEE Transactions on Electron Devices

Volumn 36, Issue 12, 1989, Pages 2839-2843

  Catalano, Anthony ^b   Newton, James ^b   Trafford, Mark ^b  

^a Solarex Thin Film Division ^*  (United States)

^b DREXEL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON--THIN FILMS; SPECTROSCOPY, ABSORPTION;

ELECTRONIC MOBILITY; PHOTOTHERMAL DEFLECTION SPECTROSCOPY;

TRANSISTORS;

EID: 0024908309     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.40969     Document Type: Article

References (10)

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2. R. R. Arya, A. Catalano, and R. S. Oswald, “Amorphous silicon p-i-n solar cells with graded interface,” Appl. Phys. Lett., vol. 49, no. 17, p. 1089, 1986.
3. D. Kruangam et al., “Amorphous silicon carbide thin film light emitting diode,” Optoelectron. Devices Technol., vol. 1, no. 1, p. 67, 1986.
4. A. Catalano, J. L. Newton, R. R. Arya, and S. Wiedeman, “Optoelectronic electronic properties of amorphous a-Si1-x Cx: H films prepared by dc discharge,” in Tech. Dig. Int. PVSEC-3 (Tokyo), 1987, p. 61.
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7. S. Wiedeman, M. S. Bennett, and J. L. Newton, “Method for the reduction of photothermal deflection spectroscopy data taken on amorphous silicon (a-Si: H),” Mater. Res. Soc. Symp. Proc., vol. 95, p. 145, 1987.
8. A. Anderson, R. Rothwarf, R. Kerns, and E. Boling, “Thin film amorphous silicon transistors: Design and model results,” to be published.
9. T. A. DeMassa and H. I. Refioglu, “TFT characteristics with distributed traps in the semiconductor,” Solid State Electron., vol. 18, p. 315, 1975.
10. T. Tiedje, J. M. Cebulka, D. L. Morel, and B. Abeles, “Evidence for exponential band tails in amorphous silicon hydride,” Phys. Rev. Lett., vol. 46, p. 1425, 1981.