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Volumn 3, Issue , 1989, Pages 1033-1036
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Easy-to-use FET DRO design procedure suited to most CAD programs
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Author keywords
[No Author keywords available]
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Indexed keywords
RESONATORS;
SEMICONDUCTING GALLIUM ARSENIDE;
TRANSISTORS, FIELD EFFECT;
DIELECTRIC RESONATOR OSCILLATOR;
MESFET;
OSCILLATORS, MICROWAVE;
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EID: 0024906083
PISSN: 0149645X
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (28)
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References (6)
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