The generation lifetime damage factor and its variance in silicon

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 1872-1881

  Dale, C J ^a   Marshall, P W ^a,b   Burke, E A ^c   Summers, G P ^a,d   Bender, G E ^e  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SFA INC   (United States)

^c MISSION RESEARCH CORPORATION   (United States)

^d UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

^e GENERAL ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NEUTRONS; PROTONS;

ATOMIC RECOILS; CHARGE INJECTION DEVICES; COULOMBIC RECOILS; DARK CURRENTS;

SEMICONDUCTOR DEVICES;

EID: 0024902703     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45381     Document Type: Article

References (23)

1. C.J.Dale, P.W.Marshall, E.A.Burke, G.P.Summers, and E.A.-Wolicki, “High Energy Electron Induced Displacement Damage in Silicon,” IEEE Trans. Nucl. Sci. NS-35, 1208 (1988).
2. J.R.Srour, S.C.Chen, S.Othmer, and R.A.Hartmann, “Radiation Damage Coefficients for Silicon Depletion Regions,” IEEE Trans. Nucl. Sci. NS-26, 4784 (1979).
3. R.A.Williams and R.D.Nelson, “Radiation Effects in Charge Coupled Devices,” IEEE Trans. Nucl. Sci. NS-22, 2639 (1975).
4. J.R.Srour, R.A.Hartmann and K.S.Kitazaki, “Permanent Damage Produced by Single Proton Interactions in Silicon Devices,” IEEE Trans. Nucl. Sci. NS-33, 1597 (1986).
5. E.A.Burke, J.J.Boyle and H.J.Heummler, “Gamma-Induced Noise in CCD's,” IEEE Trans. Nucl. Sci. NS-28, 4068 (1981).
6. E.A.Burke, G.E.Bender, J.K.Pimbley, G.P.Summers, C.J.Dale, M.A.Xapsos, and P.W.Marshall, “Gamma Induced Dose Fluctuations in a Charge Injection Device,” IEEE Trans. Nucl. Sci. NS-35, 1302 (1988).
7. G.Vincent, A.Chantre and D.Bois, “Electric Field Effect on the Thermal Emission of Traps in Semiconductor Junctions,” J. Appl. Phys. 50, 5484 (1979).
8. P.A.Martin, B.G.Streetman and K.Hess, “Electric Field Enhanced Emission from non-Coulombic traps in Semiconductors,” J. Appl. Phys. 52, 7409 (1981).
9. M.J.J.Theunissen and F.J.List, “Analysis of the Soft Reverse Characteristics of n+p Drain Diodes,” Sol. State Elect. 28, 417 (1985).
10. D.K.Schroder, “The Concept of Generation and Recombination Lifetimes in Semiconductors,” IEEE Trans. El. Dev. ED-29, 1336 (1982).
11. H.H.Anderson, “Energy Resolution of a Calorimetric Charged-Particle Spectrometer,” Nucl. Instr. Meth. B12, 437–439 (1985).
12. J.Lindhard, V.Nielsen, M.Scharff and P.V.Thomsen, “Integral Eqs. Governing Radiation Effects (Notes on Atomic Collisions, III),” Mat. Fys. Medd. Dan. Vid. Selsk. 33, N10, 1 (1963).
13. A.M.Kellerer, “Fundamentals of Microdosimetry” in The Dosimetry of Ionizing Radiation, Vol.1, K.R.Kase et al., (Academic Press, NY) 1985.
14. E.A.Burke, “Energy Dependence of Proton-Induced Displacement Damage in Silicon,” IEEE Trans. Nucl. Sci. NS-33, 1276 (1986).
15. E.A.Burke, C.J.Dale, A.B.Campbell, G.P.Summers, T.Palmer, and R.Zuleeg, “Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide,” IEEE Trans. Nucl. Sci. NS-34, 1220 (1987).
16. G.P.Summers, E.A.Burke, M.A.Xapsos, C.J.Dale, P.W.Marshall, and E.L.Petersen, “Displacement Damage in GaAs Structures,” IEEE Trans. Nucl. Sci. NS-35, 1221 (1988).
17. L.Winsberg and J.M.Alexander, “Ranges and Range Straggling of Tb, At and Po,” Phys. Rev. 121, 518 (1961).
18. G.E.Farrell, P.J.McNulty and W.Abel-Kader, “Microdosimetric Analysis of Proton Induced Reactions in Silicon and Gallium Arsenide,” IEEE Trans. Nucl. Sci. NS-31, 1073 (1984).
19. The White Sands fast burst reactor fission spectra were obtained from T.M. Flanders.
20. V. McLane, C.L.Dunford and P.F.Rose in Neutron Cross Sections, Vol.2, (Academic Press, NY) 1988.
21. G.P.Summers, E.A.Burke, C.J.Dale, E.A.Wolicki, P.W.Marshall, and M.A.Gehlhausen, “Correlation of Particle-Induced Displacement Damage in Silicon,” IEEE Trans Nucl. Sci, NS-34, 1134 (1987).
22. E.A.Burke and G.P.Summers, “Extreme Damage Events Produced by Single Particles,” IEEE Trans. Nucl. Sci. NS-34, 1575 (1987).
23. P.W.Marshall, C.J.Dale, E.A.Burke, G.P.Summers, and G.E.Bender, “Displacement Damage Extremes in Silicon Depletion Regions,” This Transactions.