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Volumn , Issue , 1989, Pages 27-28
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New preamorphization technique for very shallow p+-n junctions
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALS--PHYSICAL PROPERTIES;
SEMICONDUCTING ANTIMONY;
CMOS;
CRYSTALLINE/AMORPHOUS INTERFACE;
HEAVY ION;
N-TYPE CONDUCTIVITY;
PREAMORPHIZATION TECHNIQUE;
SHALLOW JUNCTIONS;
SEMICONDUCTOR DEVICES;
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EID: 0024899808
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (13)
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References (3)
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