5 V-only 256 kbit CMOS flash EEPROM

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 32, Issue , 1989, Pages 132-133,-313

  D'Arrigo, Sebastiano ^a   Imondi, Giuliano ^a   Santin, Giovanni ^a   Gill, Manzur ^a   Cleavelin, Rinn ^a   Spagliccia, Stefano ^a   Tomassetti, Elvio ^a   Lin, Sung ^a   Nguyen, Arthur ^a   Shah, Pradeep ^a   Savarese, Guiseppi ^a   McElroy, Dave ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

DIGEST OF PAPER; EEPROM; FLOATING-GATE TRANSISTOR; FOWLER-NORDHEIM CURRENT; MERGED-PASS-GATE TRANSISTOR; TUNNEL OXIDE MODULE;

DATA STORAGE, DIGITAL;

EID: 0024897857     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)