Scaling, Subthreshold, and Leakage Current Matching Characteristics in High-Temperature (25°C–250°C) VLSI CMOS Devices

IEEE Transactions on Components, Hybrids, and Manufacturing Technology

Volumn 12, Issue 4, 1989, Pages 780-788

  Shoucair, F S ^a  

^a BROWN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, MOS;

CMOS INTEGRATED CIRCUITS; CMOS TECHNOLOGY SCALING; DIFFUSION-LEAKAGE CURRENTS; GOLD-BASED METALLIZATIONS; SILICON CMOS; SOURCE-TO-BODY LEAKAGE CURRENTS;

INTEGRATED CIRCUITS, VLSI;

EID: 0024888874     PISSN: 01486411     EISSN: None     Source Type: Journal    
DOI: 10.1109/33.49047     Document Type: Article

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