Atomic layer molecular beam epitaxy (Almbe) of III-V compounds: Growth modes and applications

Applied Physics A Solids and Surfaces

Volumn 49, Issue 6, 1989, Pages 729-737

  Briones, F ^a   Gonzalez L ^a   Ruiz, A ^a  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

61.14.Hg; 68.55.+ b; 82.40.Dm

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; SEMICONDUCTOR MATERIALS--GROWTH;

ATOMIC LAYER MOLECULAR BEAM EPITAXY; ENHANCED LAYER NUCLEATION; SURFACE STOICHIOMETRY;

MOLECULAR BEAM EPITAXY;

EID: 0024887698     PISSN: 07217250     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/BF00617001     Document Type: Article

References (20)

1. Growth of InP, GaAs, and In0.53Ga0.47As by chemical beam epitaxy
2. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
3. Proceedings of the 14th Int. Symp. on Gallium Arsenide and Related Compounds. Heraklion, Greece, 1987
4. Molecular-beam epitaxy growth mechanisms on GaAs(100) surfaces