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Volumn 36, Issue 6, 1989, Pages 2281-2286

A model for proton-induced SEU

Author keywords

[No Author keywords available]

Indexed keywords

COSMIC RAYS; PROTONS; SEMICONDUCTOR DEVICES, MOS; SPACECRAFT;

EID: 0024887312     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45436     Document Type: Article
Times cited : (34)

References (25)
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  • 12
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    • Monte Carlo Calculations of Nuclear Evaporation Processes. Applications to Low-Energy Reactions
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    • Dostrovsky, Z.1    Fraenkel, G.F.2
  • 14
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    • Verification of Single Event Upset Rate Estimation Methods with on-Orbit Observations
    • M. Shoga, P. Adams, D.L. Chenette, R. Koga, E.C. Smith, “Verification of Single Event Upset Rate Estimation Methods with on-Orbit Observations,” IEEE Trans. Nucl. Sci. NS-34, 1256 (1987).
    • (1987) IEEE Trans. Nucl. Sci , vol.NS-34 , pp. 1256
    • Shoga, M.1    Adams, P.2    Chenette, D.L.3    Koga, R.4    Smith, E.C.5
  • 16
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    • Partial Cross Sections in High-Energy Nuclear Reactions and Astropysical Applications. Targets with Z≤28
    • R. Silberberg, C.H. Tsao, “Partial Cross Sections in High-Energy Nuclear Reactions and Astropysical Applications. Targets with Z≤28,” Ast. J. Suppl. Ser., 220, 25, 315 (1973).
    • (1973) Ast. J. Suppl. Ser , vol.220 , Issue.25 , pp. 315
    • Silberberg, R.1    Tsao, C.H.2
  • 17
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    • Improved Cross Sections Calculations for Astrophysical Applications
    • R. Silberberg, C.H. Tsao, “Improved Cross Sections Calculations for Astrophysical Applications,” Ast. J. Suppl. Ser., 58, 873 (1985).
    • (1985) Ast. J. Suppl. Ser , vol.58 , pp. 873
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  • 18
    • 0003686640 scopus 로고
    • Cosmic Ray Effects on Microelectronics, Part IV
    • Washington DC 20375–5000
    • J.H. Adams, Jr, “Cosmic Ray Effects on Microelectronics, Part IV,” NRL Memorandum Report 5901, Washington DC 20375–5000 (1986).
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  • 19
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    • Single Event Upsets (SEU) of Semiconductors Devices; a Summery of JPL Test Data
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  • 20
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    • The Dependence of Single Event Upset on Proton Energy (15–590 MeV)
    • D.K. Nichols, W.E. Price and J.L. Andrews, “The Dependence of Single Event Upset on Proton Energy (15–590 MeV),” IEEE Trans. Nucl. Sci. NS-29, 2081 (1982).
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  • 23
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    • Proton-Induced Upsets in the Low Altitude Polar Orbits
    • Marco Island, July, IEEE Trans. Nucl. Sci., this issue.
    • L. Adams, R. Harboe-Sorensen, E. Daly and J. Ward, “Proton-Induced Upsets in the Low Altitude Polar Orbits,” IEEE Radiation Effects Conference, Marco Island, 24–28 July 1989, IEEE Trans. Nucl. Sci., this issue.
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    • Adams, L.1    Harboe-Sorensen, R.2    Daly, E.3    Ward, J.4
  • 24
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    • Cosmic Ray Simulation Studies on CMOS Memories: a Comparison of CASE (Californium-252 Assessment of Single Event Effects) with Cyclotron Heavy-Ions
    • T.K. Sanderson, J.H. Stephen, D. Mapper, J.Farren, R. Harboe-Sorensen and L. Adams, “Cosmic Ray Simulation Studies on CMOS Memories: a Comparison of CASE (Californium-252 Assessment of Single Event Effects) with Cyclotron Heavy-Ions,” AERE Harwell - R 11386 (1984).
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    • COSTRANS: un Logiciel de Calcul des Taux d'Upsets Induits par les Ions lourds en Orbite
    • to be published.
    • J. Bourrieau, “COSTRANS: un Logiciel de Calcul des Taux d'Upsets Induits par les Ions lourds en Orbite,” Note ONERA/CERT/DERTS, to be published.
    • Note ONERA/CERT/DERTS
    • Bourrieau, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.