The Effect of Interface States on Amorphous-Silicon Transistors

IEEE Transactions on Electron Devices

Volumn 36, Issue 12, 1989, Pages 2971-2972

  Ibaraki, Nobuki ^a   Fukuda, Kaichi ^a   Takata, Hiroko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON--THIN FILMS; SILICON NITRIDE;

INTERFACE STATES; NITRIDE PASSIVATION; THIN FILM TRANSISTORS;

TRANSISTORS;

EID: 0024884488     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.40965     Document Type: Article

References (4)

1. M. J. Powell and J. Pritchard, “The effect of surface states and fixed charge on the field effect conductance of amorphous silicon,” J. Appl. Phys., vol. 54, p. 3244, 1983.
2. M. S. Shur, M. Hack, and C. Hyun, “Flat-band voltage and surface states in amorphous silicon-based alloy field-effect transistors,— J. Appl. Phys., vol. 56, p. 382, 1984.
3. I. Chen, “The interface and the field effect in thin-film transistors,” J. Appl. Phys., vol. 56, p. 396, 1984.
4. R. A. Street and M. J. Thompson, “Electronic states at the hydrogen-ated amorphous silicon/silicon nitride interface,” Appl. Phys. Lett., vol. 45, p. 769, 1984.