A model for phosphorus segregation at the silicon-silicon dioxide interface

Applied Physics A Solids and Surfaces

Volumn 49, Issue 6, 1989, Pages 671-675

  Lau, F ^a   Mader, L ^a   Mazure, C ^a   Werner, Ch ^a   Orlowski, M ^a  

^a SIEMENS AG   (Germany)

Author keywords

64.75; 66.30J

Indexed keywords

PHOSPHORUS; SEMICONDUCTING SILICON--SURFACES; SILICA--SURFACES;

INTERFACES; PHOSPHORUS DOPING; PHOSPHORUS SEGREGATION;

SEMICONDUCTOR DEVICES;

EID: 0024883448     PISSN: 07217250     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/BF00616992     Document Type: Article

References (14)

1. Abstract: Auger–sputter profiling study of phosphorus pileup at the Si–SiO2 interface
2. Solid Solubilities of Impurity Elements in Germanium and Silicon*