Very low threshold current density (410-A/cm2) 1.3-μm GaInAsP graded index separate confinement heterostructure multiple quantum well laser

CONFERENCE ON LASERS AND ELECTRO-0PTICS

Volumn , Issue , 1989, Pages 50-52

  Kasukawa, A ^a   Imajo, Y ^a   Murgatroyd, I J ^a   Kashiwa, S ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS;

DIGEST OF PAPER; MULTI-QUANTUM-WELL; QUANTUM WELL LASER; THRESHOLD CURRENT DENSITY;

LASERS, SEMICONDUCTOR;

EID: 0024875356     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)