Extremely high current density, low peak voltage, pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 559-562

  Broekaert, Tom P E ^a   Fonstad, Clifton G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATORS, MICROWAVE; SEMICONDUCTING INDIUM COMPOUNDS;

DIGITAL SWITCHING; HIGH CURRENT DENSITY; QUANTERNARY SYSTEM; RESONANT TUNNELING DIODES;

SEMICONDUCTOR DIODES;

EID: 0024870480     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)