0.6 μm high speed BiCMOS technology with emitter-base self-aligned structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1989, Pages 241-244

  Yoshimura, T ^a   Yamada, S ^a   Yamauchi, T ^a   Shimauchi, Y ^a   Inayoshi, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC CIRCUITS, EMITTER COUPLED; TRANSISTORS, BIPOLAR; TRANSISTORS, FIELD EFFECT;

15-GHZ CUTOFF FREQUENCY; BICMOS; CMOS TRANSISTOR; HIGH-SPEED BICMOS; POLYSILICON; SELF-ALIGNED STRUCTURE;

INTEGRATED CIRCUITS, CMOS;

EID: 0024870227     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)