Field Emission from Tungsten-Clad Silicon Pyramids

IEEE Transactions on Electron Devices

Volumn 36, Issue 11, 1989, Pages 2679-2685

  Busta, Heinz H ^a   Shadduck, Robert R ^b   Orvis, William J ^c  

^a BP EXPLORATION   (United Kingdom)

^b Spectramed Inc ^*  (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES, FIELD EMISSION; SEMICONDUCTING SILICON; TUNGSTEN AND ALLOYS--CHEMICAL VAPOR DEPOSITION;

FOWLER-NORDHEIM EMISSION; SILICON PYRAMIDS;

SEMICONDUCTOR DEVICES;

EID: 0024772050     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43772     Document Type: Article

References (17)

1. C.A. Spindt, “A thin-film field-emission cathode,” J. Appl. Phys., vol. 39, p. 3504, 1968.
2. C.A. Spindt, C.E. Holland, and R.D. Stowell, “Field emission cathode array development for high-current density applications,” Appl. Surface Sci., vol. 16, p. 268, 1983.
3. H.F. Gray, G.J. Campisi, and R.F. Greene, “A vacuum field effect transistor using silicon field emitter arrays,” in IEDM Tech. Dig., Dec. 1986, p. 776.
4. R. Greene, H. Gray, and G. Campisi, “Vacuum integrated circuits,” in IEDM Tech. Dig., Dec. 1985, p. 172.
5. T.A. Dayton, Jr. and H.G. Kosmahl, “Ultra small electron beam amplifiers,” in IEDM Tech. Dig., Dec. 1986, p. 780.
6. G. Labrunie and R. Meyer, “Novel type of emissive flat-panel display: The matrixed cold-cathode microtip fluorescent display,” Display Tech. Appl., vol. 8, p. 37, 1987.
7. R.F. Greene and H.F. Gray, “A simple theory of semiconductor field emission saturation,” paper presented at the 1st Int. Vacuum Microelectronics Conf., Williamsburg, VA, June 1988.
8. E.K. Broadbent and C.L. Ramiller, “Selective low pressure chemical vapor deposition of tungsten,” J. Electrochem. Soc., vol. 131, p. 1427, 1984.
9. K.Y. Tsao and H.H. Busta, “LPCVD of tungsten on polycrystalline and single crystal silicon via the silicon reduction,” J. Electrochem. Soc., vol. 131, p. 2702, 1984.
10. H.H. Busta and C.H. Tang, “Film thickness dependence of silicon reduced LPCVD tungsten on native oxide thickness,” J. Electrochem. chem. Soc., vol. 133, p. 1195, 1986.
11. N. Lifshitz, “Nature of the self-limiting effect in the low-pressure chemical vapor deposition of tungsten,” Appl. Phys. Lett., vol. 51, p. 967, 1987.
12. M. Wong, N. Kobayashi, R. Browning, D. Paine, and K.C. Saraswat, “The effects of chemical oxide on the deposition of tungsten by the silicon reduction of tungsten hexafluoride,” J. Electrochem. Soc., vol. 134, p. 2339, 1987.
13. 6,” J. Electrochem. Soc., vol. 134, p. 2285, 1987.
14. J.K. Cochran, K.J. Lee, and D.N. Hill, “Comparison of low-voltage field emission from TaC and tungsten fiber arrays,” J. Mater. Res., vol. 3, p. 67, 1988.
15. J.M. Houston, “The slope of logarithmic plots of the Fowler-Nordheim Nordheim equation,” Phys. Rev., vol. 88, p. 349, 1952.
16. A.B. Shapiro, “'TOPAZ:A finite element heat conduction code for analyzing 2-D solids,” VCID-20045, Lawrence Livermore National Lab., Livermore, CA, 1984.
17. J.K. Cochran, A.T. Chapman, D.N. Hill, and K.J. Lee, “Low-voltage voltage field emission from tungsten fiber arrays in a stabilized zirconia conia matrix,” J. Mater. Res., vol. 2, p. 322, 1987.