Application of Electrical Effective Channel Length and External Resistance Measurement Techniques to a Submicrometer CMOS Process

IEEE Transactions on Electron Devices

Volumn 36, Issue 11, 1989, Pages 2499-2505

  Mountain, David J ^a  

^a Department of Defense ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS--MEASUREMENTS; SEMICONDUCTOR DEVICES, MOSFET--MEASUREMENTS;

CHANNEL LENGTH; CMOS PROCESS; MOS DEVICES; SERIES RESISTANCE; SUBMICRON DEVICES;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024770257     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43673     Document Type: Article

References (10)

1. K. Terada and H. Muta, “A new method to determine effective MOSFET FET channel length,” Japan. J. Appl. Phys., vol. 18, p. 953, 1979.
2. J. Chem, P. Chang, R. Motta, and N. Godhino, “A new method to determine MOSFET channel length,” IEEE Electron Device Lett., vol. EDL-1, p. 170, 1980.
3. J. Scarpulla and J. Krusius, “Improved statistical method for extraction of MOSFET effective channel length and resistance,” IEEE Trans. Electron Devices, vol. ED-34, p. 1354, 1987.
4. B. Sheu, C. Hu, P. Ko, and F.-C. Hsu, “Source-and-drain series resistance of LDD MOSFET's,” IEEE Electron Device Lett., vol. EDL-5, p. 365, 1984.
5. G. Hu, C. Chang, and Y. Chia, “Gate-voltage dependent effective channel length and series resistance of LDD MOSFET's,” IEEE Trans. Electron Devices, vol. ED-34, 2469, 1987.
6. W. Wordeman, J. Sun, and S. Laux, “Geometry effects on MOSFET channel length extraction algorithms,” IEEE Electron Device Lett., vol. EDL-6, p. 186, 1985.
7. J. Sun, M. Wordeman, and S. Laux, “On the accuracy of channel length characterization of LDD MOSFET's,” IEEE Trans. Electron Devices, vol. ED-33, p. 1556, 1986.
8. S. Laux, “Accuracy of effective channel length/external resistance extraction algorithms for MOSFET's,” IEEE Trans. Electron Devices, vol. ED-31, p. 1245, 1984.
9. G. Box, W. Hunter, and J. Hunter, Statistics for Experimenters. New York: Wiley, 1978.
10. M. Karnett and R. Dunham, “An improved SEM technique for accurate determination of MOSFET channel length,” Proc. SPIE, vol. 921, p. 440, 1988.