Efficient two-dimensional multilayer process simulation of advanced bipolar devices

Solid State Electronics

Volumn 32, Issue 11, 1989, Pages 1013-1023

  Baccus, Bruno ^a   Dubois, Emmanuel ^a   Collard, Dominique ^a   Morel, Denis ^a  

^a Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI; SEMICONDUCTOR DEVICES, BIPOLAR; SEMICONDUCTOR MATERIALS--ION IMPLANTATION;

ADVANCED BIPOLAR DEVICES; INTERFACE DOPANT REDISTRIBUTION; NONPLANAR CHARACTERISTICS; POLYSILICON TRANSISTORS; SOFTWARE PACKAGE IMPACT 4; TWO-DIMENSIONAL MULTILAYER PROCESS SIMULATION;

TRANSISTORS, BIPOLAR;

EID: 0024770047     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(89)90165-2     Document Type: Article

References (20)

1. 1.25 /spl mu/m Deep-Groove-Isolated Self-Aligned Bipolar Circuits
2. On the punchthrough characteristics of advanced self-aligned bipolar transistors
3. VLSI Process modeling—SUPREM III
4. IMPACT—A point-defect-based two-dimensional process simulator: Modeling the lateral oxidation-enhanced diffusion of dopants in silicon
5. The effect of thin interfacial oxides on the electrical characteristics of silicon bipolar devices