High-Performance Salicide Shallow-Junction CMOS Devices for Submicrometer VLSI Application in Twin-Tub VI

IEEE Transactions on Electron Devices

Volumn 36, Issue 11, 1989, Pages 2530-2536

  Lu, Chih Yuan ^a   Sung, Janmye James ^a   Manocha, Ajit S ^a   Kirsch, Howard C ^a   Tsai, Nun Sian ^a,b   Liu, Ruichen ^a   Hillenius, Steven J ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI--DESIGN; MICROELECTRONICS; SEMICONDUCTOR DEVICES, MOSFET;

CMOS DEVICES; SUBMICRON DESIGN; VLSI DESIGN;

SEMICONDUCTOR DEVICES, MOS;

EID: 0024768212     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.43677     Document Type: Article

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