Thermal oxidation of CdTe surfaces and the properties of MOS diodes

Nuclear Inst. and Methods in Physics Research, A

Volumn 283, Issue 2, 1989, Pages 268-273

  Suita, Muneyoshi ^a   Taguchi, Tsunemasa ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTOR DEVICES, MOS; SPECTROSCOPY, X-RAY; SURFACES--OXIDATION; THERMAL EFFECTS;

THERMAL OXIDATION; X-RAY PHOTOELECTRON SPECTRA;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0024767816     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(89)91370-3     Document Type: Article

References (14)

1. Charge collection in M-S-M cadmium telluride detectors
2. Polarization in Cadmium Telluride Nuclear Radiation Detectors
3. The Role of Defect Production at Surface and Interface of CdHgTe and ZnHgTe
4. Complex behaviour of Ag in CdTe