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Volumn 8, Issue 10, 1989, Pages 1065-1073
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Temperature Dependence Modeling for MOS VLSI Circuit Simulation
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Author keywords
[No Author keywords available]
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Indexed keywords
INTEGRATED CIRCUITS, VLSI--COMPUTER SIMULATION;
MATHEMATICAL TECHNIQUES--SENSITIVITY ANALYSIS;
OSCILLATORS;
BERKELEY SHORT CHANNEL IGFET MODEL;
MOS VLSI CIRCUIT SIMULATION;
RING OSCILLATOR;
TEMPERATURE DEPENDENCE MODELING;
SEMICONDUCTOR DEVICES, MOS;
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EID: 0024755264
PISSN: 02780070
EISSN: 19374151
Source Type: Journal
DOI: 10.1109/43.39068 Document Type: Article |
Times cited : (12)
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References (0)
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