A model for the silicon wafer bonding process

Japanese Journal of Applied Physics

Volumn 28, Issue 10 R, 1989, Pages 1735-1741

  Stengl, R ^a   Tan, T ^b   Gosele U ^c  

^a DUKE UNIVERSITY   (United States)

^b SIEMENS AG   (Germany)

^c Research Triangle Park ^*  (Germany)

Author keywords

Interface chemistry; Interface energy; Silicon direct bonding (SDB); Silicon wafer bonding; Silicon on insulator (SOI)

Indexed keywords

QUARTZ; SEMICONDUCTOR DEVICES; SPECTROSCOPY, INFRARED;

INTERFACE ENERGY; SILICON DIRECT BONDING; SILICON ON INSULATOR TECHNOLOGY; SILICON WATER BONDING;

SEMICONDUCTING SILICON;

EID: 0024755127     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.1735     Document Type: Article

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