Xecl excimer laser annealing used to fabricate poly-si tft’s

Japanese Journal of Applied Physics

Volumn 28, Issue 10 R, 1989, Pages 1789-1793

  Sameshima, Toshiyuki ^a   Hara, Masaki ^a   Usui, Setsuo ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Hydrogenated amorphous silicon; Laser induced crystallization; Transient conductance measurements

Indexed keywords

HEAT TREATMENT; LASERS, EXCIMER - APPLICATIONS; SEMICONDUCTING SILICON - THIN FILMS; TRANSISTORS;

LASER INDUCED CRYSTALLIZATION; TRANSIENT CONDUCTANCE MEASUREMENTS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0024753175     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.1789     Document Type: Article

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