Role of point defects in the transient diffusion and clustering of implanted boron in silicon

Materials Science and Engineering B

Volumn 4, Issue 1-4, 1989, Pages 101-105

  Cowern, N E B ^a   Jos, H F F ^a   Janssen, K T F ^b  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BORON--DIFFUSION; CRYSTALS--DEFECTS; DIFFUSION--MATHEMATICAL MODELS; CRYSTALS--STRUCTURE; SILICON AND ALLOYS--ION IMPLANTATION;

CLUSTERING; CRYSTALLINE SILICON; POINT DEFECTS; CLUSTERING MECHANISMS; INTERSTITIALCY MECHANISM; VACANCY SUPERSATURATION;

SEMICONDUCTING SILICON;

EID: 0024752672     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(89)90224-9     Document Type: Article

References (15)

1. Formation of stable dopant interstitials during ion implantation of silicon
2. Anomalous transient diffusion of ion implanted dopants: A phenomenological model