The effects of secondary electrons from a silion substrate on sr x-ray lithography

Japanese Journal of Applied Physics

Volumn 28, Issue 10 R, 1989, Pages 2070-2073

  Ogawa, Taro ^a   Mochiji, Kozo ^a   Kimura, Yasunari ^a  

^a HITACHI LTD   (Japan)

Author keywords

Pattern replication; Resist patterns; Resolution limit; Secondary electrons; Silicon substrate; Synchrotron radiation; X ray lithography

Indexed keywords

MICROSCOPIC EXAMINATION - SCANNING ELECTRON MICROSCOPY; POLYMETHYL METHACRYLATE; SEMICONDUCTING SILICON; X-RAYS;

SECONDARY ELECTRONS; SYNCHROTRON RADIATION; X-RAY LITHOGRAPHY;

LITHOGRAPHY;

EID: 0024752413     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.2070     Document Type: Article

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