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Volumn 28, Issue 9, 1989, Pages 1208-1215

Single‐Source III/V Precursors: A New Approach to Gallium Arsenide and Related Semiconductors

Author keywords

Gallium arsenide; Metallacycles; Semiconductors; Single source precursors

Indexed keywords

NUCLEAR MAGNETIC RESONANCE; ORGANOMETALLICS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS--SYNTHESIS; X-RAY ANALYSIS;

EID: 0024739651     PISSN: 05700833     EISSN: 15213773     Source Type: Journal    
DOI: 10.1002/anie.198912081     Document Type: Review
Times cited : (367)

References (69)
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    • According to the recent IUPAC convention, groups III and V become groups 13 and 15, respectively. However, the older group III/V nomenclature is still in frequent usage in the context of semiconductor research.
  • 2
    • 85088668911 scopus 로고
    • Some leading references:, No. 27, p.
    • (1986) Chem. Eng. News , vol.64 , pp. 34
  • 3
    • 84990078249 scopus 로고
    • National Photovoltaics Program Five Year Plan, 1984–88, May, p.11
    • (1983)
  • 13
    • 0041366247 scopus 로고
    • See, for example, papers in the First International Conference on OMCVD in
    • (1981) J. Cryst. Growth , vol.55 , pp. 1
  • 20
    • 84990169256 scopus 로고    scopus 로고
    • Electronic Materials Conference (Amherst, MA, USA 1986), Abstract B1.
    • Bhat, R.1    Koza, M.A.2
  • 32
    • 84990126087 scopus 로고    scopus 로고
    • 2 and described its conversion to In P. For vapor pressure data see [15a]
  • 60
    • 84990112546 scopus 로고    scopus 로고
    • (b) in [47a] Vol. 1, pp. 108–111
  • 61
    • 84990076815 scopus 로고    scopus 로고
    • (c) in [47a] Vol. 4, p. 531.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.