-
1
-
-
0020477489
-
Monolithic 2-20 GHz GaAs travelling-wave amplifier
-
July 8
-
Y. Ayasli, L.D. Reynolds, J.L. Vorhaus, and L. Hanes, “Monolithic 2-20 GHz GaAs travelling-wave amplifier,” Electron. Lett., vol. 18, no. 14, pp. 596–598, July 8, 1982.
-
(1982)
Electron. Lett.
, vol.18
, Issue.14
, pp. 596-598
-
-
Ayasli, Y.1
Reynolds, L.D.2
Vorhaus, J.L.3
Hanes, L.4
-
2
-
-
0013397163
-
A 2-18 GHz monolithic distributed amplifier using dual-gate GaAs FET's
-
Dec.
-
W. Keenan, T. Andrade, and C.C. Huang, “A 2-18 GHz monolithic distributed amplifier using dual-gate GaAs FET's,” IEEE Trans. Electron Devices, Vol. ED-31, pp. 1926–1930, Dec. 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.31 ED
, pp. 1926-1930
-
-
Keenan, W.1
Andrade, T.2
Huang, C.C.3
-
3
-
-
0022874803
-
A 15 to 45 GHz distributed amplifier using 3 FET's of varying periphery
-
M.J. Schindler, J.P. Wendler, A.M. Morris, and P.A. Lamarre. “A 15 to 45 GHz distributed amplifier using 3 FET's of varying periphery,” in 1986 IEEE GaAs IC Symp., pp. 67–70.
-
(1986)
IEEE GaAs IC Symp.
, pp. 67-70
-
-
Schindler, M.J.1
Wendler, J.P.2
Morris, A.M.3
Lamarre, P.A.4
-
4
-
-
0005775780
-
A 12-dB high-gain monolithic distributed amplifier
-
Dec.
-
R.A. LaRue, S.G. Bandy, and G.A. Zdasiuk, “A 12-dB high-gain monolithic distributed amplifier,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 1542–1547, Dec. 1986.
-
(1986)
IEEE Trans. Microwave Theory Tech.
, vol.34 MTT
, pp. 1542-1547
-
-
LaRue, R.A.1
Bandy, S.G.2
Zdasiuk, G.A.3
-
5
-
-
0020152768
-
A monolithic GaAs 1-13 GHz traveling-wave amplifier
-
July
-
Y. Ayasli, R.L. Mozzi, J.L. Vorhaus, L.D. Reynolds, and R.A. Pucel, “A monolithic GaAs 1-13 GHz traveling-wave amplifier,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 976–981, July 1982.
-
(1982)
IEEE Trans. Microwave Theory Tech.
, vol.30 MTT
, pp. 976-981
-
-
Ayasli, Y.1
Mozzi, R.L.2
Vorhaus, J.L.3
Reynolds, L.D.4
Pucel, R.A.5
-
6
-
-
0022201341
-
High power distributed amplifier using MBE synthesized material
-
B. Kim, H.Q. Tserng, and H.D. Shih, “High power distributed amplifier using MBE synthesized material,” in IEEE Microwave Millimeterwave Monolithic Circuits Symp. Dig. (St. Louis), 1985, pp. 35–37.
-
(1985)
IEEE Microwave Millimeterwave Monolithic Circuits Symp. Dig. (St. Louis)
, pp. 35-37
-
-
Kim, B.1
Tserng, H.Q.2
Shih, H.D.3
-
7
-
-
0002803187
-
A dc-12 GHz monolithic GaAs FET distributed amplifier
-
July
-
E.W. Strid and K.R. Gleason, “A dc-12 GHz monolithic GaAs FET distributed amplifier,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1065–1071, July 1982.
-
(1982)
IEEE Trans. Electron Devices
, vol.29 ED
, pp. 1065-1071
-
-
Strid, E.W.1
Gleason, K.R.2
-
8
-
-
0021393525
-
0.5 W 2-21 GHz monolithic GaAs distributed amplifier
-
Mar.
-
B. Kim and H.Q. Tserng, “0.5 W 2-21 GHz monolithic GaAs distributed amplifier,” Electron. Lett., vol. 20, no. 7, pp. 288–289, Mar. 1984.
-
(1984)
Electron. Lett.
, vol.20
, Issue.7
, pp. 288-289
-
-
Kim, B.1
Tserng, H.Q.2
-
9
-
-
0012621802
-
A high-performance 2—18.5 GHz distributed amplifier—theory and experiment
-
Dec.
-
T. McKay, J. Eisenberg, and R.E. Williams, “A high-performance 2—18.5 GHz distributed amplifier—theory and experiment,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 1559–1568, Dec. 1986.
-
(1986)
IEEE Trans. Microwave Theory Tech.
, vol.34 MTT
, pp. 1559-1568
-
-
McKay, T.1
Eisenberg, J.2
Williams, R.E.3
-
10
-
-
0023535257
-
A 2-20 GHz high-gain monolithic HEMT distributed amplifier
-
Dec.
-
S.G. Bandy et al., “A 2-20 GHz high-gain monolithic HEMT distributed amplifier,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 1494–1500, Dec. 1987.
-
(1987)
IEEE Trans. Microwave Theory Tech.
, vol.35 MTT
, pp. 1494-1500
-
-
Bandy, S.G.1
-
12
-
-
0021388894
-
MESFET distributed amplifier design guidelines
-
Mar.
-
J.B. Beyer, S.N. Prasad, R.C. Becker, J.E. Nordman, and Ci. K. Hohenwartcr, “MESFET distributed amplifier design guidelines.” IEEE Trans. Microware Theory Tech., vol. MTT-32, pp. 268–275. Mar. 1984.
-
(1984)
IEEE Trans. Microware Theory Tech.
, vol.32 MTT
, pp. 268-275
-
-
Beyer, J.B.1
Prasad, S.N.2
Becker, R.C.3
Nordman, J.E.4
Hohenwartcr, C.K.5
-
13
-
-
0022736064
-
On gain-bandwidth product for distributed amplifiers
-
June
-
R.C. Becker and J.B. Beyer, “On gain-bandwidth product for distributed amplifiers.” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 736–738, June 1986.
-
(1986)
IEEE Trans. Microwave Theory Tech.
, vol.34 MTT
, pp. 736-738
-
-
Becker, R.C.1
Beyer, J.B.2
-
14
-
-
49249139242
-
-
Univ. Wisconsin-Madison, Dept. ECE. Report No. ECE- 83–6”. ing assistant in a communications lab and as an instructor in a microwave lab. Since December 1988 he has been a member of the technical staff in the Radar Department at Sandia National Laboratories in Albuquerque. NM. Dr. Deibele is a member of Eta Kappa Nu. Phi Kappa Phi, and Sigma Xi and is an associated Member of Triangle.
-
J.B. Beyer et al., “Wideband monolithic microwave amplifier studv,” Univ. Wisconsin-Madison, Dept. ECE. Report No. ECE- 83–6”. 1983. ing assistant in a communications lab and as an instructor in a microwave lab. Since December 1988 he has been a member of the technical staff in the Radar Department at Sandia National Laboratories in Albuquerque. NM. Dr. Deibele is a member of Eta Kappa Nu. Phi Kappa Phi, and Sigma Xi and is an associated Member of Triangle.
-
(1983)
Wideband monolithic microwave amplifier studv
-
-
Beyer, J.B.1
|