Surface processes in ale and mbe growth of znse: correlation of rheed intensity variation with surface coverage

Japanese Journal of Applied Physics

Volumn 28, Issue 9 R, 1989, Pages 1659-1663

  Zhu, Ziqiang ^a   Hagino, Minoru ^a   Uesugi, Katsuhiro ^b,c   Kamiyama, Satomi ^b,c   Fujimoto, Masami ^b,c   Yao, Takafumi ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c TOKAI UNIVERSITY   (Japan)

Author keywords

Atomic layer epitaxy; Growth model; Molecular beam epitaxy; RHEED intensity; RHEED intensity variation; Surface coverage; Surface Processes; ZnSe

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY;

ATOMIC LAYER EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RHEED; SURFACE COVERAGE; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0024734508     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.28.1659     Document Type: Article

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