A full-color LCD addressed by poly-Si TFT's fabricated below 450°C

IEEE Transactions on Electron Devices

Volumn 36, Issue 9, 1989, Pages 1934-1937

  Yuki, Masanori ^a   Masumo, Kunio ^a   Kunigita, Masaya ^a  

^a ASAHI GLASS CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; LASER BEAMS; SEMICONDUCTING SILICON--AMORPHOUS; SOLID STATE DEVICES, THIN FILM--FABRICATION;

ACTIVE MATRIX LCD; COLOR LIQUID CRYSTAL DISPLAYS; LASER INDUCED CRYSTALLIZATION;

DISPLAY DEVICES;

EID: 0024733525     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.34273     Document Type: Article

References (7)

1. S. Morozumi et al., “Low temperature processed poly Si TFT and its application to large area LCD,” in Proc. Japan Display, 1986, p. 196.
2. A. Mimura et al., “High-performance low-temperature poly-Si TFTs for LCD,” in IEDM Tech. Dig., 1987, p. 436.
3. M. K. Hatalis and D. W. Greve, “High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films,” IEEE Electron Device Lett., vol. EDL-8, p. 361, 1987.
4. T. Nishimura, Y. Akasaka, H. Nakata, A. Ishizu, and T. Matsumoto, “Characteristics of TFT fabricated in laser-recrystallized polysilicon for active LC display,” in SID Dig., 1982, p. 36.
5. J. C. C. Fan, H. J. Zeiger, R. P. Gale, and R. L. Chapman, “Solid-phase growth of large aligned grains during scanned laser crystallization of amorphous Ge films on fused silica,” Appl. Phys. Lett., vol. 36, p. 158, 1980.
6. F. Morin et al., “Polycrystalline and amorphous silicon integrated circuits for addressing displays devices,” in Proc. Euro Display, 1981, p. 206.
7. P. Migliorato and D. B. Meakin, “Material properties and characteristics of polysilicon transistors for large area electronics,” Appl. Surface Sci., vol. 30, p. 353, 1987.