Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substrates

Journal of Crystal Growth

Volumn 97, Issue 2, 1989, Pages 273-284

  Garrett, B ^a   Thrush, E J ^a  

^a NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

OPTOELECTRONIC DEVICES; ORGANOMETALLICS; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS;

INDIUM PHOSPHIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0024732934     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(89)90208-X     Document Type: Article

References (11)

1. A novel technology for formation of a narrow active layer in buried heterostructure lasers by single-step MOCVD
2. Characteristics of the {111} Surfaces of the III–V Intermetallic Compounds
3. Model studies of crystal growth phenomena in the III-V semiconducting compounds