메뉴 건너뛰기




Volumn 24, Issue 4, 1989, Pages 951-961

A 50⁃dB Variable Gain Amplifier Using Parasitic Bipolar Transistors in CMOS

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, VLSI--DESIGN; SEMICONDUCTOR DEVICES, MOS--FABRICATION; SIGNAL RECEIVERS--COMPONENTS; TRANSISTORS, BIPOLAR--APPLICATIONS;

EID: 0024719764     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.34077     Document Type: Article
Times cited : (58)

References (23)
  • 1
  • 2
  • 3
    • 3943097527 scopus 로고
    • A four quadrant analog divider/multiplier with 0.01% distortion
    • B. Gilbert, “A four quadrant analog divider/multiplier with 0.01% distortion,” in ISSCC Dig. Tech. Papers, 1983, pp. 248–249.
    • (1983) ISSCC Dig. Tech. Papers , pp. 248-249
    • Gilbert, B.1
  • 4
    • 67649119451 scopus 로고
    • A precise four-quadrant mulliplier with subnanosecond response
    • B. Gilbert, “A precise four-quadrant mulliplier with subnanosecond response,” IEEE J. Solid-State Circuits, vol. SC-3, pp. 365–373, 1968.
    • (1968) IEEE J. Solid-State Circuits , vol.SC-3 , pp. 365-373
    • Gilbert, B.1
  • 5
    • 0020311885 scopus 로고
    • A four quadrant NMOS analog multiplier
    • Dec.
    • D. C. Soo and R. G. Meyer, “A four quadrant NMOS analog multiplier,” IEEE J. Solid-State Circuits, vol. SC-17, pp. 1174–1178, Dec. 1982.
    • (1982) IEEE J. Solid-State Circuits , vol.SC-17 , pp. 1174-1178
    • Soo, D.C.1    Meyer, R.G.2
  • 6
    • 0022331933 scopus 로고
    • A 20-V four-quadrand CMOS analog multiplier
    • Dec.
    • J. N. Babanezhad and G. C. Temes, “A 20-V four-quadrand CMOS analog multiplier,” IEEE J. Solid-State Circuits, vol. SC-21, pp. 430–435, Dec. 1985.
    • (1985) IEEE J. Solid-State Circuits , vol.SC-21 , pp. 430-435
    • Babanezhad, J.N.1    Temes, G.C.2
  • 7
    • 41549133866 scopus 로고
    • A MOS four quadrant multiplier using the quarter-square technique
    • Dec.
    • J. S. Peña-Finol and J. A. Connelly, “A MOS four quadrant multiplier using the quarter-square technique,” IEEE J. Solid-State Circuits, vol. SC-22, pp. 1064–1073, Dec. 1987.
    • (1987) IEEE J. Solid-State Circuits , vol.SC-22 , pp. 1064-1073
    • PeñA-Finol, J.S.1    Connelly, J.A.2
  • 9
    • 0014596187 scopus 로고
    • Complementary MOS-bipolar transistor structure
    • Nov.
    • H. C. Lin, J. C. Ho, R. R. Iyer, and K. Kwong, “Complementary MOS-bipolar transistor structure,” IEEE Trans. Electron Devices, vol. ED-16, pp. 945–951, Nov. 1969.
    • (1969) IEEE Trans. Electron Devices , vol.ED-16 , pp. 945-951
    • Lin, H.C.1    Ho, J.C.2    Iyer, R.R.3    Kwong, K.4
  • 11
    • 0018480071 scopus 로고
    • A high speed low power Hi-CMOS 4K static RAM
    • June
    • O. Minato et al., “A high speed low power Hi-CMOS 4K static RAM,” IEEE Trans. Electron Devices, vol. ED-26, pp. 882–885, June 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 882-885
    • Minato, O.1
  • 12
    • 0023329975 scopus 로고
    • Design considerations for a high performance 3 μm CMOS analog standard cell library
    • Apr.
    • C. Laber et al., “Design considerations for a high performance 3 μm CMOS analog standard cell library,” IEEE J. Solid-State Circuits, vol. SC-22, pp. 181–189, Apr. 1987.
    • (1987) IEEE J. Solid-State Circuits , vol.SC-22 , pp. 181-189
    • Laber, C.1
  • 14
    • 0020769729 scopus 로고
    • MOS transistors operated in the lateral bipolar mode and their application in CMOS technology
    • E. A. Vittoz, “MOS transistors operated in the lateral bipolar mode and their application in CMOS technology,” IEEE J. Solid-State Circuits, vol. SC-18, pp. 273–279, 1983.
    • (1983) IEEE J. Solid-State Circuits , vol.SC-18 , pp. 273-279
    • Vittoz, E.A.1
  • 15
    • 0023576616 scopus 로고
    • The potential of using parasitic bipolars in CMOS for analog circuits
    • Minneapolis, MN), Sept.
    • A. A. Abidi, V. Comino, and T.-W. Pan, “The potential of using parasitic bipolars in CMOS for analog circuits,” in Proc. Bipolar Circuits Tech. Meeting (Minneapolis, MN), Sept. 1987, pp. 90–93.
    • (1987) Proc. Bipolar Circuits Tech. Meeting , pp. 90-93
    • Abidi, A.A.1    Comino, V.2    Pan, T.-W.3
  • 16
    • 0345932506 scopus 로고
    • VLSI process integration
    • S. M. Sze, Ed. New York: McGraw-Hill
    • L. C. Parrillo, “VLSI process integration,” in VLSI Technology, S. M. Sze, Ed. New York: McGraw-Hill, 1983.
    • (1983) VLSI Technology
    • Parrillo, L.C.1
  • 17
    • 0019527577 scopus 로고
    • Measurement and interpretation of the fT of planar transistors operating in the inverse mode
    • Feb.
    • K. W. Kwan and A. Brunnschweiler, “Measurement and interpretation of the fT of planar transistors operating in the inverse mode,” Proc. Inst. Elec. Eng., vol. 128, pp. 33–36, Feb. 1981.
    • (1981) Proc. Inst. Elec. Eng. , vol.128 , pp. 33-36
    • Kwan, K.W.1    Brunnschweiler, A.2
  • 18
    • 0002818770 scopus 로고
    • Accurate measurement of emitter and collector series resistances in transistors
    • Jan.
    • B. Kulke and S. Miller, “Accurate measurement of emitter and collector series resistances in transistors,” Proc. IRE, vol. 45, p. 90, Jan. 1957.
    • (1957) Proc. IRE , vol.45 , pp. 90
    • Kulke, B.1    Miller, S.2
  • 19
    • 84941447404 scopus 로고    scopus 로고
    • Model BR1A Base Resistance Test Set, Colby Instruments, Santa Monica, CA.
    • Model BR1A Base Resistance Test Set, Colby Instruments, Santa Monica, CA.
  • 21
    • 0024124560 scopus 로고
    • Lateral nonuniformities and the MOSFET mobility step near threshold
    • Dec.
    • J. A. Wikstrom and C. R. Viswanathan, “Lateral nonuniformities and the MOSFET mobility step near threshold,” IEEE Trans. Electron Devices, vol. 35, pp. 2378–2383, Dec. 1988.
    • (1988) IEEE Trans. Electron Devices , vol.35 , pp. 2378-2383
    • Wikstrom, J.A.1    Viswanathan, C.R.2
  • 22
    • 84938013831 scopus 로고
    • A new wide-band amplifier technique
    • Dec.
    • B. Gilbert, “A new wide-band amplifier technique,” IEEE J. Solid-State Circuits, vol. SC-3, pp. 353–365, Dec. 1968.
    • (1968) IEEE J. Solid-State Circuits , vol.SC-3 , pp. 353-365
    • Gilbert, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.